Dual N & P-Channel PowerTrench® MOSFET 150V

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Overview

These dual N and P-Channel enhancement mode Power MOSFETs are produced using an advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Shrinking the area needed for implementation of active clamp topology; enabling best in class power density.

  • This product is general usage and suitable for many different applications.
  • Q1: N-Channel
    Max rDS(on) = 30 mΩ at VGS = 10 V, ID = 6.2 A
    Max rDS(on) = 41 mΩ at VGS = 6 V, ID = 5.2 A
  • Q2: P-Channel
    Max rDS(on) = 1200 mΩ at VGS = -10 V, ID = -1 A
    Max rDS(on) = 1400 mΩ at VGS = -6 V, ID = -0.9 A
  • Optimized for active clamp forward converters
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMS8095AC

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Active

CAD Model

Pb

A

H

P

WDFN-8

1

260

REEL

3000

Y

Complementary

PowerTrench® T1

Power 56 (SO-8FL)

Low-Medium Voltage

Standard

0

Dual

0

150

30

25

4

27

50

~NA~

~NA~

~NA~

1.8

1441

3.9

68

127

4.4

$2.0261

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