N-Channel PowerTrench® SyncFET™ 30V, 22A, 5.0mΩ

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Overview

The FDMS8027S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 5.0 mO at VGS = 10 V, ID = 18 A
  • Max rDS(on) = 6.2 mO at VGS = 4.5 V, ID = 16 A
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency
  • SyncFET Schottky Body Diode
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMS8027S

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Active

CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

Power 56 (SO-8FL)

Low-Medium Voltage

Logic

0

Single

0

30

5

20

3

22

36

-

6.2

93

11

1365

-

-

-

-

$0.69

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