P-Channel PowerTrench® MOSFET -30V, -122A, 3.2mΩ

Last Shipments

Overview

FDMS6681Z is not recommended for new design. Please apply NTMFS005P03P8ZT1G as a replacement.  

  • This product is general usage and suitable for many different applications.

  • Industrial, Consumer, and High End Computing

  • Max rDS(on) = 3.2 mΩ at VGS = -10 V, ID = -21.1 A
  • Max rDS(on) = 5.0 mΩ at VGS = -4.5 V, ID = -15.7 A
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency
  • HBM ESD protection level of 8kV typical (Note 3)
  • MSL1 robust package design
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMS6681Z

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Last Shipments

CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

Power 56 (SO-8FL)

Low-Medium Voltage

Logic

0

Single

0

-30

3.2

25

-3

-122

73

-

5

39

97

7803

-

-

-

-

Price N/A

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