N-Channel Power Trench® MOSFET 60V, 49A, 6.7mΩ

Active, Not Rec

Overview

This N-Channel MOSFET is produced using an advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

  • This product is general usage and suitable for many different applications.

  • Max rDS(on) = 6.7mΩ at VGS = 10V, ID = 13.6A
  • Max rDS(on) = 8.2mΩ at VGS = 4.5V, ID = 12.3A
  • Advanced Package and Silicon combination for low rDS(on)
  • MSL1 robust package design
  • 100% UIL Tested
  • RoHS Compliant

Tools and Resources

Product services, tools and other useful resources related to FDMS5352

Buy/Parametrics Table

Search

Close Search

Products:

1

Share

Product Groups:

Orderable Parts:

1

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMS5352

Loading...

Active, Not Rec

CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 56 (SO-8FL)

Low-Medium Voltage

Logic

0

Single

0

60

6.7

±20

3

49

104

-

8.2

-

48

5220

17

48

410

225

$1.2012

More Details

Show More

1-25 of 25

Products per page

Jump to :

contact sales icon

Support on the go

Find and compare products, get support and connect with onsemi sales team.