P-Channel PowerTrench® MOSFET -30V, -18A, 20mΩ

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Overview

This P-Channel MOSFET is produced using an advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

  • Notebook PC
  • Max rDS(on) = 20 mΩ at VGS = -10 V, ID = -9.0 A
  • Max rDS(on) = 37 mΩ at VGS = -4.5 V, ID = -6.5 A
  • Extended VGSS range (-25 V) for battery applications
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability
  • HBM ESD protection level >7 kV typical (Note 4)
  • 100% UIL tested
  • Termination is Lead-free and RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMS4435BZ

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Active

CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

Power 56 (SO-8FL)

Low-Medium Voltage

Logic

0

Single

0

-25

20

25

-3

-18

39

-

37

-

18

1540

-

-

-

-

$0.4492

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