N-Channel PowerTrench® MOSFET 100V, 39A, 14.8mΩ

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Overview

This N-Channel MOSFET is produced using an advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

  • This product is general usage and suitable for many different applications.

  • Maximum RDS(on) = 14.8 mΩ at VGS = 10 V, ID = 8.9 A
  • Advanced Package and Silicon combination for low RDS(on)
  • MSL1 robust package design
  • 100% UIL Tested
  • RoHS compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMS3662

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CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 56 (SO-8FL)

Low-Medium Voltage

Standard

0

Single

0

100

14.8

±20

4.5

8.9

104

-

-

12

54

3470

15

71

245

110

$1.189

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