N-Channel Shielded Gate PowerTrench® MOSFET 80V, 166A, 2.7mΩ

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Overview

This N-Channel MV MOSFET is produced using ON Semiconductor's advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

  • Primary DC-DC MOSFET
  • Synchronous Rectifier in DC-DC and AC-DC
  • Motor Drive
  • Solar
  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 2.7 mΩ at VGS = 10 V, ID = 68 A
  • Max rDS(on) = 6.7 mΩ at VGS = 6 V, ID = 34 A
  • 50% lower Qrr than other MOSFET suppliers
  • Lower switching noise/EMI
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMS2D5N08C

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Active

CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

Y

N-Channel

PowerTrench® T8

Power 56 (SO-8FL)

Low-Medium Voltage

Standard

0

Single

0

80

2.7

20

4

166

138

-

-

-

54

4455

12

55

1480

59

$1.4342

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