N-Channel Shielded Gate PowerTrench® MOSFET 80 V, 147 A, 3.1 mΩ

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Overview

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.

  • High Performance DC-DC converters
  • AC-DC Synchronous Rectification
  • Motor control

  • Netcom/Telecom
  • AC Adapter
  • Power Tools

  • Low RDS(on) and Qg
  • Very Low Qrr
  • Lowers switching noise / EMI
  • 100% UIL tested

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMS003N08C

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CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

Y

N-Channel

PowerTrench® T8

Power 56 (SO-8FL)

Low-Medium Voltage

Logic

0

Single

0

80

3.1

20

4

147

2.7

-

8.1

33

52

3820

10

53

1335

44

$3.1823

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