N-Channel PowerTrench® MOSFET 20V, 7A, 26mΩ

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Overview

This Single N-Channel MOSFET has been designed using an advanced Power Trench process to optimize the rDS(on) @ VGS = 1.5 V on special MicroFET leadframe.

  • This product is general usage and suitable for many different applications.

  • Max rDS(on) = 26 mΩ at VGS = 4.5 V, ID = 7 A
  • Max rDS(on) = 31 mΩ at VGS = 2.5 V, ID = 6 A
  • Max rDS(on) = 39 mΩ at VGS = 1.8 V, ID= 5 A
  • Max rDS(on) = 53 mΩ at VGS = 1.5 V, ID = 4A
  • Low profile: 0.55 mm maximum in the new packageMicroFET 1.6x1.6 Thin
  • Free from halogenated compounds and antimony oxides
  • HBM ESD protection level > 1800V (Note3)
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDME410NZT

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CAD Model

Pb

A

H

P

UDFN-6

1

260

REEL

5000

N

N-Channel

PowerTrench® T1

Power 22

Low-Medium Voltage

Logic

0

Single

0

20

-

8

1

7

2.1

31

26

8.5

9.2

770

-

-

-

-

Price N/A

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