Dual P-Channel PowerTrench® MOSFET -20V, -2.6A, 142mΩ

Last Shipments

Overview

This device is designed specifically as a single package solution for the battery charges switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible.
The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A
  • Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A
  • Max rDS(on)= 331 mΩ at VGS = -1.8 V, ID = -1.5 A
  • Max rDS(on) = 530 mΩ at VGS = -1.5 V, ID = -1.2 A
  • Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
  • Free from halogenated compounds and antimony oxides
  • HBM ESD protection level > 1600V (Note3)
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDME1023PZT

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Last Shipments

CAD Model

Pb

A

H

P

UDFN-6

1

260

REEL

5000

No

P-Channel

PowerTrench® T1

Power 22

Low-Medium Voltage

Logic

0

Dual

0

-20

-

8

-1

-2.6

1.4

Q1=Q2=213

Q1=Q2=142

-

5.5

305

-

-

-

-

Price N/A

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