Low/Medium Voltage MOSFETs | FDMD8430

Dual N-Channel PowerTrench® MOSFET, 30V, 28A, 2.12mΩ

Obsolete

Datasheet

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Overview

This package integrates two N-Channel devices connected internally in common-source configuration. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom. It provides a very small footprint (3.3 x 5 mm) for higher power density.

  • Isolated DC−DC Synchronous Rectifiers
  • Common Ground Load Switches
  • Max rDS(on) = 2.12 mΩ at VGS = 10 V, ID = 28 A
  • Max rDS(on) = 2.95 mΩ at VGS = 4.5 V, ID = 24 A
  • Ideal for Flexible Layout in Secondary Side Synchronous Rectification
  • 100% UIL Tested
  • Termination is Lead-free and RoHS compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMD8430

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Obsolete

CAD Model

Pb

A

H

P

PQFN-8

483AU

1

260

REEL

3000

No

N-Channel

PowerTrench® T1

NA

Low-Medium Voltage

Logic

0

Dual

0

30

Q1=Q2=2.12

±20

3

95

29

-

Q1=Q2=2.95

25

52

3595

7

22

1150

112

Price N/A

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