Low/Medium Voltage MOSFETs | FDMC8878

N-Channel Power Trench® MOSFET 30V, 16.5A, 14mΩ

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Overview

This N-Channel MOSFET is a rugged gate version of an advanced Power Trench process. It has been optimized for power management applications.

  • This product is general usage and suitable for many different applications.

  • Max rDS(on) = 14mΩ at VGS = 10V, ID = 9.6A
  • Max rDS(on) = 17mΩ at VGS = 4.5V, ID = 8.7A
  • Low Profile–1mm max in MLP 3.3X3.3
  • RoHS compliant

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMC8878

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Similar Products
CAD Model

Pb

A

H

P

WDFN-8

511DH

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Logic

0

Single

0

30

14

20

3

16.5

31

-

17

-

18

1000

-

-

-

-

Price N/A

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Reliability Data

Die Related Summary Data

Device: FDMC8878

Equivalent to wafer fab process: T5

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

T5

0

1599906359

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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