Low/Medium Voltage MOSFETs | FDMC86520L

N-Channel Power Trench® MOSFET 60V, 22A, 7.9mΩ

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Overview

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

  • DC-DC Merchant Power Supply

  • Max rDS(on) = 7.9 mΩ at VGS = 10 V, ID = 13.5 A
  • Max rDS(on) = 11.7 mΩ at VGS = 4.5 V, ID = 11.5 A
  • Low Profile - 1 mm max in Power 33
  • 100% UIL Tested
  • RoHS Compliant

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Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

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Qgd Typ @ VGS = 4.5 V (nC)

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Reference Price

FDMC86520L

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CAD Model

Pb

A

H

P

WDFN-8

511DH

1

260

REEL

3000

Y

N-Channel

PowerTrench® T6

Power 33 (u8FL)

Low-Medium Voltage

Logic

0

Single

0

60

7.9

±20

3

22

40

-

11.7

-

21

3420

4.9

21

638

25

$0.8887

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Reliability Data

Die Related Summary Data

Device: FDMC86520L

Equivalent to wafer fab process: T9

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

T9

0

1733101746

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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