N-Channel Power Trench® MOSFET 100V, 43A, 14mΩ

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Overview

This N-Channel MOSFET is produced using an advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for applications where ulta low RDS(on) is required in small spaces such as High performance VRM, POL and orring functions.

  • DC-DC Merchant Power Supply
  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 A
  • Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A
  • High performance technology for extremely low rDS(on)
  • Termination is Lead-free and RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMC86160

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Active

CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Standard

0

Single

0

100

14

±20

4

43

54

-

-

-

9.8

968

3.5

45

241

11

$0.9237

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