Low/Medium Voltage MOSFETs | FDMC8321LDC

N-Channel Power Trench® MOSFET 40V, 108A, 2.5mΩ

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Overview

This N-Channel MOSFET is produced using an advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

  • This product is general usage and suitable for many different applications.

  • Dual CoolTM Top Side Cooling PQFN package
  • Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 27 A
  • Max rDS(on) = 4.1 mΩ at VGS = 4.5 V, ID = 21 A
  • High performance technology for extremely low rDS(on)
  • RoHS Compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

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FDMC8321LDC

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CAD Model

Pb

A

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Reliability Data

Die Related Summary Data

Device: FDMC8321LDC

Equivalent to wafer fab process: U5

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

U5

0

54180784

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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