N-Channel Power Trench® MOSFET 40V, 108A, 2.5mΩ

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Overview

This N-Channel MOSFET is produced using an advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

  • This product is general usage and suitable for many different applications.
  • Dual CoolTM Top Side Cooling PQFN package
  • Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 27 A
  • Max rDS(on) = 4.1 mΩ at VGS = 4.5 V, ID = 21 A
  • High performance technology for extremely low rDS(on)
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMC8321LDC

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Active

CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 33 Dual Cool

Low-Medium Voltage

Logic

0

Single

0

40

2.5

±20

3

108

56

-

4.1

-

22

2832

6.1

11

777

66

$0.8749

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