N-Channel Power Trench® MOSFET 40V, 49A, 2.5mΩ

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Overview

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or convertional switching PWM contollers. It has been optimized for low gate charge, low rDS(on), fast switching speed body diode reverse recovery performance.

  • DC-DC Merchant Power Supply

  • Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 22 A
  • Max rDS(on) = 4.1 mΩ at VGS = 4.5 V, ID = 18 A
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency
  • Next Generation enhanced body diode technology, engineered for soft recovery
  • 100% UIL tested
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMC8321L

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CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Logic

0

Single

0

40

2.5

±20

3

49

40

-

4.1

-

44

2930

5.8

20

1000

60

$0.462

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