N-Channel Power Trench® MOSFET 40V, 18A, 26mΩ

Overview

This N-Channel MOSFET is produced using an advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

  • Consumer

  • Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 7 A
  • Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6 A
  • Low Profile - 1 mm max in Power 33
  • 100% UIL Tested
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMC8015L

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Active

CAD Model

Pb

A

H

P

WDFN-8

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Logic

0

Single

0

40

26

±20

3

18

24

-

36

-

6.6

710

2.5

8.6

94

58

$0.2668

More Details

FDMC8015L-L701

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Last Shipments

CAD Model

Pb

A

H

P

WDFN-8

1

260

REEL

3000

F

N-Channel

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Standard

0

Single

0

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Price N/A

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