N-Channel PowerTrench® MOSFET 30V, 12A, 11.5mΩ

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Overview

This N-Channel MOSFET is produced using an advanced Power Trench® process that has been especially tailored to minimize the on-state resistance.This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 11.5 mΩ at VGS = 10 V, ID = 12 A
  • Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10.0 A
  • High performance technology for extremely low rDS(on)
  • Termination is Lead-free and RoHS Compliant

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2

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMC7696

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Active

CAD Model

Pb

A

H

P

WDFN-8

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Logic

0

Single

0

30

11.5

20

3

12

25

-

14.5

-

8

1075

-

-

-

-

$0.3394

More Details

FDMC7696-L701

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Last Shipments

CAD Model

Pb

A

H

P

WDFN-8

1

260

REEL

3000

F

N-Channel

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Standard

0

Single

0

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Price N/A

More Details

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