Low/Medium Voltage MOSFETs | FDMC612PZ

P-Channel PowerTrench® MOSFET -20V, -14A, 8.4mΩ

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Data Sheet

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Overview

This P-Channel MOSFET is produced using an advanced PowerTrench® process that has been optimized for rDS(ON), switching performance and ruggedness.

  • This product is general usage and suitable for many different applications.

  • Max rDS(on) = 8.4 mΩ at VGS = -4.5 V, ID = -14 A
  • Max rDS(on) = 13 mΩ at VGS = -2.5 V, ID = -11 A
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability in a widely used surface mount package
  • Termination is Lead-free and RoHS Compliant
  • HBM ESD capability level > 3.6 KV typical (Note 4)

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMC612PZ

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CAD Model

Pb

A

H

P

WDFN-8

511DR

1

260

REEL

3000

No

P-Channel

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Logic

0

Single

0

-20

-

12

-1.5

-14

26

13

8.4

14

53

5710

-

-

-

-

Price N/A

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