P-Channel PowerTrench® MOSFET -12V. -80A, 3.9mΩ

Overview

This P-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

  • This product is general usage and suitable for many different applications.

  • Max rDS(on) = 3.9 mΩ at VGS = -4.5 V, ID = -22 A
  • Max rDS(on) = 6.4 mΩ at VGS = -2.5 V, ID = -16 A
  • State-of-the-art switching performance
  • Lower output capacitance, gate resistance, and gate charge boost efficiency
  • Shielded gate technology reduces switch node ringing and increases immunity to EMI and cross conduction
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMC610P

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Active

CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Logic

0

Single

0

-12

-

8

-1

-80

48

6.4

3.9

22

71

890

-

-

-

-

$0.8416

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