Low/Medium Voltage MOSFETs | FDMC3612-L701

N-Channel Power Trench® MOSFET 100V, 12A, 110mΩ

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Overview

This N-Channel MOSFET is produced using an advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

  • PSE FET

  • POE Products

  • Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3.3 A
  • Low Profile - 1 mm max in Power 33
  • Max rDS(on) = 122 mΩ at VGS = 6 V, ID = 3.0 A
  • 100% UIL Tested
  • RoHS Compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMC3612-L701

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Active

CAD Model

Pb

A

H

P

WDFN-8

511DQ

1

260

REEL

3000

F

N-Channel

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Standard

0

Single

0

100

110

20

4

12

2.3

~NA~

-

~NA~

14.4

880

3.7

37

55

35

$0.3733

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Reliability Data

Die Related Summary Data

Device: FDMC3612-L701

Equivalent to wafer fab process: TR

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

TR

1

1603286882

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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