Low/Medium Voltage MOSFETs | FDMC035N10X1

N-Channel PowerTrench® MOSFET 100 V, 5.5 A, 37 mΩ

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Overview

This N-Channel MOSFET is produced using onsemi's advanced PowerTrench® technology. This very high density process is especially tailored to minimize on state resistance and optimized for hot swap applications.

  • This product is general usage and suitable for many different applications.

  • Max rDS(on) = 37 mΩ at VGS = 10 V, ID = 5.5 A
  • Max rDS(on) = 41 mΩ at VGS = 6 V, ID = 5.0 A
  • Low Profile - 0.8 mm max in Power 33
  • 100% UIL Tested
  • RoHS Compliant

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Package Name

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Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

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Reference Price

FDMC035N10X1

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Last Shipments

CAD Model

Pb

A

H

P

PQFN-8

483AX

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Standard

0

Single

0

100

37

±20

4

5.5

50

-

-

50

41

1910

11

58

109

64

Price N/A

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Reliability Data

Die Related Summary Data

Device: FDMC035N10X1

Equivalent to wafer fab process: TR

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

TR

1

1603286882

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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