Low/Medium Voltage MOSFETs | FDMC0310AS

N-Channel PowerTrench® SyncFET™ 30V, 21A, 4.4mΩ

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Overview

The FDMC0310AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic schottky body diode.

  • Notebook PC

  • Max. RDS(on) = 4.4 mΩ at VGS = 10 V, ID = 19 A
  • Max. RDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17.5 A
  • Advanced package and silicon combination for low rDS(on) and high efficiency
  • SyncFET™ Schottky Body Diode
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMC0310AS

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Obsolete

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Reliability Data

Die Related Summary Data

Device: FDMC0310AS

Equivalent to wafer fab process: U4

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

U4

0

1599145130

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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