N-Channel Power Trench® MOSFET 30 V, 1.23 mΩ

Overview

This N-Channel MOSFET is produced using an advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

  • This product is general usage and suitable for many different applications.

  • Max rDS(on) = 1.23 mΩ at VGS = 10 V, ID = 35 A
  • Max rDS(on) = 1.46 mΩ at VGS = 4.5 V, ID = 32 A
  • High performance technology for extremely low rDS(on)
  • Termination is Lead-free
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMC012N03

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Active

CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Logic

0

Single

0

30

1.23

12

2

35

64

-

1.46

-

35

5845

-

-

-

-

$0.4758

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