Dual N-Channel Power Trench® MOSFET 25V, 7.0A, 23mΩ

Last Shipments

Overview

These N-Channel Logic Level MOSFETs are produced using an advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where the low in-line power loss and fast switching are required.

  • Mobile Handsets

  • Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7.0 A
  • Max rDS(on) = 33 mΩ at VGS = 4.5 V, ID = 5.5 A
  • Fast switching speed
  • Low gate charge
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMB3900AN

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Last Shipments

CAD Model

Pb

A

H

P

WDFN-8

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Logic

0

Dual

0

20

Q1=Q2=23

20

3

7

1.6

-

Q1=Q2=33

-

7

650

-

-

-

-

Price N/A

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