Low/Medium Voltage MOSFETs | FDMA8884

N-Channel PowerTrench® MOSFET 30V, 6.5A, 23mΩ

Obsolete

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Overview

This N-Channel MOSFET is produced using an advanced Power Trench® process that has been optimized for rDS(on) switching performance.

  • Notebook PC

  • Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A
  • Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 6.0 A
  • High performance trench technology for extremely low rDS(on)
  • Fast switching speed
  • RoHS Compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMA8884

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

WDFN-6

511CZ

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

Power 22

Low-Medium Voltage

Logic

0

Single

0

30

23

20

3

6.5

1.9

-

30

-

2.7

339

-

-

-

-

Price N/A

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Reliability Data

Die Related Summary Data

Device: FDMA8884

Equivalent to wafer fab process: RN

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

RN

9

5181260142

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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