Low/Medium Voltage MOSFETs | FDMA7628

Single N-Channel 1.5 V Specified PowerTrench® MOSFET 20V, 9.4A, 14.5mΩ

Obsolete

Datasheet

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Overview

This Single N-Channel MOSFET has been designed using onsemi Semiconductor's advanced Power Trench® process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe.

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  • Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 9.4 A
  • Max rDS(on) = 18.2 mΩ at VGS = 2.5 V, ID = 8.3 A
  • Max rDS(on) = 23.3 mΩ at VGS = 1.8 V, ID = 7.3 A
  • Max rDS(on) = 32.3 mΩ at VGS = 1.5 V, ID = 6.2 A
  • Low Profile -0.8 mm maximum in the new package MicroFET 2x2 mm
  • RoHS Compliant

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMA7628

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Obsolete

CAD Model

Pb

A

H

P

WDFN-6

511DB

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

Power 22

Low-Medium Voltage

Logic

0

Single

0

20

-

8

1

9.4

1.9

18.2

14.5

4.4

6.2

1260

-

-

-

-

Price N/A

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