P-Channel PowerTrench® MOSFET-30V, -6.8A, 35mΩ

Overview

This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications . It features a MOSFET with low on-state resistance.
The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

  • This product is general usage and suitable for many different applications.

  • Max. RDS(on) = 35mΩ at VGS = -10V, ID = -6.8A
  • Max. RDS(on) = 65mΩ at VGS = -4.5V, ID = -5.0A
  • Low profile -0.8mm maximum -in the new package MicroFET 2X2 mm
  • HBM ESD protection level > 3k V typical (Note 3)
  • Free from halogenated compounds and antimony oxides
  • RoHS compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMA530PZ

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Active

CAD Model

Pb

A

H

P

WDFN-6

1

260

REEL

3000

No

P-Channel

PowerTrench® T1

Power 22

Low-Medium Voltage

Logic

0

Single

0

-30

35

25

-3

-6.8

2.4

-

65

24

9

805

-

-

-

-

$0.2972

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