Low/Medium Voltage MOSFETs | FDMA410NZ

N-Channel PowerTrench® MOSFET, 1.5 V Specified, 20V, 9.5A, 23mΩ

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Overview

This Single N-Channel MOSFET has been designed using an advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe.

  • This product is general usage and suitable for many different applications.

  • Max rDS(on) = 23 mΩ at VGS = 4.5 V, ID = 9.5 A
  • Max rDS(on) = 29 mΩ at VGS = 2.5 V, ID = 8.0 A
  • Max rDS(on) = 36 mΩ at VGS = 1.8 V, ID = 4.0 A
  • Max rDS(on) = 50 mΩ at VGS = 1.5 V, ID = 2.0 A
  • HBM ESD protection level > 2.5 kV (Note 3)
  • Low Profile-0.8 mm maximum in the new package MicroFET 2x2 mm
  • Free from halogenated compounds and antimony oxides
  • RoHS Compliant

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Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

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Qgd Typ @ VGS = 4.5 V (nC)

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Reference Price

FDMA410NZ

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CAD Model

Pb

A

H

P

WDFN-6

511CZ

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

Power 22

Low-Medium Voltage

Logic

0

Single

0

20

-

8

1

9.5

2.4

29

23

8.8

10

815

-

-

-

-

$0.3215

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Reliability Data

Die Related Summary Data

Device: FDMA410NZ

Equivalent to wafer fab process: T5

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

T5

0

1599906359

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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