Low/Medium Voltage MOSFETs | FDMA1430JP

Integrated P-Channel PowerTrench® MOSFET and BJT -30V , -2.9A, 90mΩ

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Overview

This device is designed specifically as a single package solution for loadswitching in cellular handset and other ultra-portable applications. It features a 50 V NPN BJT and a 30 V P-ch Trench MOSFET in the space saving MicroFET 2x2 package that offers exceptional thermal performance for it's physical size and is well suited to linear mode applications.

  • Loadswitching

  • Max rDS(on) = 90 mΩ at VGS = -4.5 V, ID = -2.9 A
  • Max rDS(on) = 130 mΩ at VGS = -2.5 V, ID = -2.6 A
  • Max rDS(on) = 170 mΩ at VGS = -1.8 V, ID = -1.7 A
  • Max rDS(on) = 240 mΩ at VGS = -1.5 V, ID = -1 A
  • Low profile - 0.8 mm maximum - in the new package MicroFET 2x2
  • HBM ESD protection level > 2 kV typical (Note 3)
  • RoHS Compliant

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Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMA1430JP

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CAD Model

Pb

A

H

P

WDFN-6

511DA

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

Power 22

Low-Medium Voltage

Logic

0

with BJT

0

-30

-

8

-1

-2.9

1.5

130

90

7.9

7.2

438

-

-

-

-

Price N/A

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