Dual N-Channel PowerTrench® MOSFET 20V, 5.0A, 54mΩ

Overview

This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

  • This product is general usage and suitable for many different applications.

  • Max rDS(on) = 54 mΩ at VGS = 4.5 V, ID = 5.0 A
  • Max rDS(on) = 66 mΩ at VGS = 2.5 V, ID = 4.2 A
  • Max rDS(on) = 82 mΩ at VGS= 1.8 V, ID = 2.3 A
  • Max rDS(on) = 114 mΩ at VGS = 1.5 V, ID = 2.0 A
  • HBM ESD protection level = 1.6 kV (Note 3)
  • Low profile - 0.8 mm maximum - in the new packageMicroFET 2x2 mm
  • RoHS Compliant
  • Free from halogenated compounds and antimonyoxides

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMA1024NZ

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Active

CAD Model

Pb

A

H

P

WDFN-6

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 22

Low-Medium Voltage

Logic

0

Dual

0

20

-

8

1

5

1.4

Q1=Q2=66

Q1=Q2=54

4

5.2

375

-

-

-

-

$0.207

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