N-Channel PowerTrench® MOSFET 100V, 4.4A, 60mΩ

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Overview

This N-Channel MOSFET is produced using an advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 60mΩ at VGS = 10V, ID = 4.4A
  • Max rDS(on) = 80mΩ at VGS = 6.0V, ID = 3.8A
  • Low Miller Charge
  • Low QRR Body Diode
  • Optimized efficiency at high frequencies
  • UIS Capability (Single Pulse and Repetitive PulseFormerly developmental type 82744
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDM3622

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Active

CAD Model

Pb

A

H

P

WDFN-8

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Standard

0

Single

0

100

60

±20

4

4.4

2.1

-

-

10

13

820

3.4

108

125

35

$0.5528

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