Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 20V, 3.7A, 68mΩ

Obsolete

Overview

This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra–portable applications. It features a MOSFET with low on–state resistance, and an independently connected schottky diode with low forward voltage.
The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.

  • This product is general usage and suitable for many different applications.

  • Max rDS(on) = 68mΩ at VGS = 4.5V, ID = 3.7A
  • Max rDS(on) = 86mΩ at VGS = 2.5V, ID = 3.3A
  • HBM ESD protection level > 2kV (Note 3)
    Schottky
  • VF < 0.37V @ 500mA
  • Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDFMA2N028Z

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Obsolete

CAD Model

Pb

A

H

P

WDFN-6

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

Power 22

Low-Medium Voltage

Logic

0

with Schottky Diode

0

20

-

12

1.5

3.7

1.4

86

68

-

4

340

-

-

-

-

Price N/A

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