N-Channel PowerTrench® MOSFET 40 V, 90 A, 3.2 mΩ

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Overview

N-Channel PowerTrench® MOSFET 40 V, 90 A, 3.2 mΩ

  • This product is general usage and suitable for many different applications.

  • Typical RDS(on) = 2.3 mΩ at VGS = 10 V, ID = 80 A
  • Typical Qg(tot) = 42 nC at VGS = 10 V, ID = 80 A
  • UIS Capability
  • RoHS Compliant
  • Qualified to AEC Q101

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDD9409-F085

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CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

1

260

REEL

2500

Y

N-Channel

PowerTrench® T1

DPAK

Low-Medium Voltage

Standard

0

Single

0

40

3.2

±20

4

90

150

-

-

-

42

3130

7.7

42

756

48

$0.6693

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