Low/Medium Voltage MOSFETs | FDD86367

N-Channel PowerTrench® MOSFET 80 V, 100 A, 4.2 mΩ

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Overview

PowerTrench® MOSFET, N-Channel, 80 V, 100 A, 4.2 mΩ

  • PowerTrain Management
  • Solenoid and Motor Drivers
  • Integrated Starter/Alternator
  • Primary Switch for 12V Systems

  • Typical RDS(on) = 3.3 mΩ at VGS = 10 V, ID = 80 A
  • Typical Qg(TOT) = 68 nC at VGS = 10 V, ID = 80 A
  • UIS Capability
  • RoHS Compliant

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Status

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDD86367

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Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

Y

N-Channel

PowerTrench® T6

DPAK

Low-Medium Voltage

Standard

0

Single

0

80

4.2

±20

4

100

227

-

-

-

68

4840

14

66

814

31

$0.9594

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Reliability Data

Die Related Summary Data

Device: FDD86367

Equivalent to wafer fab process: RM

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

RM

0

1284986536

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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