Low/Medium Voltage MOSFETs | FDD86113LZ

N-Channel Shielded Gate PowerTrench® MOSFET 100V , 5.5 A, 104 mΩ

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Overview

This N-Channel logic Level MOSFETs are produced using an advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.

  • Consumer Appliances

  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 104 mΩ at VGS = 10 V, ID = 4.2 A
  • Max rDS(on) = 156 mΩ at VGS = 4.5 V, ID = 3.4 A
  • HBM SD Protection Level > 6 kV typical (Note 4)
  • High Performance Trench Technology for Extremely Low rDS(on)
  • High Power and Current Handling Capability in a widely used surface mount package
  • 100% UIL Tested
  • RoHS Compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDD86113LZ

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CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

Y

N-Channel

PowerTrench® T1

DPAK

Low-Medium Voltage

Logic

0

Single

0

100

104

±20

3

5.5

29

-

156

-

1.9

213

0.7

20

55

2.4

$0.4255

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Reliability Data

Die Related Summary Data

Device: FDD86113LZ

Equivalent to wafer fab process: T7

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

T7

11

3294609671

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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