N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 35 A, 22.5 mΩ

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Overview

This N-Channel MOSFET is produced using an advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 22.5 mΩ at VGS = 10 V, ID = 8 A
  • Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 7A
  • HBM ESD protection level > 6 kV typical (Note 4)
  • Very low Qg and Qgd compared to competing trenchtechnologies
  • Fast switching speed
  • 100% UIL tested
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDD86102LZ

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Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

1

260

REEL

2500

Y

N-Channel

PowerTrench® T1

DPAK

Low-Medium Voltage

Logic

0

Single

0

100

22.5

±20

3

35

54

-

31

-

8.7

1157

2.4

43

181

7.7

$0.5965

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