BoostPak (N-Channel PowerTrench® MOSFET + Diode) 100V, 15.3A, 75 mΩ

Obsolete

Overview

This N-Channel MOSFET is produced using a PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
The NP diode is hyperfast rectifier with low forward voltage drop and excellent switching performance.

  • LED Monitor Backlight
  • LED TV Backlight
  • LED Lighting
  • Consumer Appliances

  • RDS(on) = 61 mΩ (Typ.)@ VGS = 10 V, ID = 12 A
  • RDS(on) = 64 mΩ (Typ.)@ VGS = 5.0 V, ID = 12 A
  • Low Gate Charge (Typ. 22.2 nC)
  • Low Crss (Typ. 42 pF)
  • Fast Switching
  • 100% Avalanche Tested
  • Improved dv/dt Capability
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDD850N10LD

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Obsolete

CAD Model

Pb

A

H

P

DPAK-5

1

260

REEL

2500

N

N-Channel

PowerTrench® T1

NA

Low-Medium Voltage

Logic

0

with Si Diodes

0

100

61

±20

2.5

15.3

42

-

66

-

22.2

1100

5.7

50

80

42

Price N/A

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