Low/Medium Voltage MOSFETs | FDD8424H_F085A

Dual N & P Channel PowerTrench® MOSFET, 40V

Obsolete

Data Sheet

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Overview

These dual N and P-Channel enhancement mode PowerMOSFETs are produced using onsemi Semiconductor’sadvanced PowerTrench® process that has been especiallytailored to minimize on-state resistance and yet maintainsuperior switching performance.

  • Infotainment
  • Portable Navigation
  • Infotainment
  • Other
  • Safety and Control
  • Comfort and Convenience
  • Body Electronics
  • Vehicle Security Systems
  • Other Automotive

  • N-Channel: 40V, 20A, 24mΩ
  • P-Channel: -40V, -20A, 54mΩ
  • Q1: N-Channel
  • Max rDS(on) = 24mΩ at VGS = 10V, ID = 9.0A
  • Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7.0A

  • Q2: P-Channel
  • Max rDS(on) = 54mΩ at VGS = -10V, ID = -6.5A
  • Max rDS(on) = 70mΩ at VGS = -4.5V, ID = -5.6A
  • Fast switching speed
  • Qualified to AEC Q101
  • RoHS Compliant

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Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDD8424H-F085A

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Find Replacements

Obsolete

CAD Model

Pb

A

H

P

DPAK-5

369AL

1

260

REEL

2500

No

Complementary

PowerTrench® T1

NA

Low-Medium Voltage

Logic

0

Dual

0

±40

N: 24, P: 54

±20

±3

±20.0

Q1:30, Q2: 35

-

N:30, P:70

-

17

N: 750, P: 1000

N: 3.2, P: 3.6

N: 19, P: 29

N: 115, P: 140

N: 75, P: 75

Price N/A

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