Low/Medium Voltage MOSFETs | FDD6637

P-Channel PowerTrench® MOSFET, 35V, -55A, 11.6mΩ

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Overview

This P-Channel MOSFET has been produced using a proprietary PowerTrench® technology to deliver low RDS(on) and optimized BVdss capability to offer superior performance benefit in the applications.

  • This product is general usage and suitable for many different applications.

  • -55 A, -35 V
  • RDS(ON) = 11.6 mΩ @ VGS = -10 V
  • RDS(ON) = 18 mΩ @ VGS = -4.5 V
  • High performance trench technology for extremely low RDS(ON)
  • RoHS Compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDD6637

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CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

N

P-Channel

PowerTrench® T1

DPAK

Low-Medium Voltage

Logic

0

Single

0

-35

11.6

25

-3

-55

57

-

18

16

25

2370

-

-

-

-

$0.6281

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Reliability Data

Die Related Summary Data

Device: FDD6637

Equivalent to wafer fab process: TT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

TT

6

2104831460

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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