Low/Medium Voltage MOSFETs | FDD3672

N-Channel UltraFET® Trench MOSFET, 100V, 44A, 28mΩ

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Overview

N-Channel UltraFET® Trench MOSFET, 100V, 44A, 28mΩ

  • This product is general usage and suitable for many different applications.

  • rDS(ON) = 24mΩ(Typ.), VGS = 10V, ID = 44A
  • Qg(tot) = 24nC (Typ.), VGS = 10V
  • Low Miller Charge
  • Low Qrr Body Diode
  • Optimized efficiency at high frequencies
  • UIS Capability (Single Pulse and Repetitive Pulse)

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Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDD3672

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Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

Y

N-Channel

PowerTrench® T1

DPAK

Low-Medium Voltage

Standard

0

Single

0

100

26

±20

4

44

135

-

-

-

3

1710

5.6

80

247

62

$0.7278

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Reliability Data

Die Related Summary Data

Device: FDD3672

Equivalent to wafer fab process: 2C

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

2C

0

3698398665

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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