P-Channel 1.8V Specified PowerTrench® MOSFET -12V, -6.7A, 28mΩ

Overview

This P-Channel 1.8V Specified MOSFET uses a advanced low voltage PowerTrench process. It has been optimized for battery power management.

  • This product is general usage and suitable for many different applications.

  • -6.7A, -12V
  • RDS(ON) = 28 mΩ @ VGS = -4.5V
  • RDS(ON) = 41 mΩ @ VGS = -2.5V
  • RDS(ON) = 90 mΩ @ VGS = -1.8V
  • Fast switching speed
  • High performance trench technology for extremelylow RDS(ON)
  • High power and current handling capability

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDD306P

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Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

1

260

REEL

2500

N

P-Channel

PowerTrench® T1

DPAK

Low-Medium Voltage

Logic

0

Single

0

-12

-

8

-1.5

-6.7

52

41

28

-

15

1290

-

-

-

-

$0.3823

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