P-Channel 1.8V Specified PowerTrench® MOSFET -12V, -6.7A, 28mΩ

Active

Overview

This P-Channel 1.8V Specified MOSFET uses a advanced low voltage PowerTrench process. It has been optimized for battery power management.

  • This product is general usage and suitable for many different applications.

  • -6.7A, -12V
  • RDS(ON) = 28 mΩ @ VGS = -4.5V
  • RDS(ON) = 41 mΩ @ VGS = -2.5V
  • RDS(ON) = 90 mΩ @ VGS = -1.8V
  • Fast switching speed
  • High performance trench technology for extremelylow RDS(ON)
  • High power and current handling capability

Tools and Resources

Product services, tools and other useful resources related to FDD306P

Product List

If you wish to buy products or product samples, please log in to your onsemi account.

Search

Close Search

Products:

1

Share

Product Groups:

Orderable Parts:

1

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDD306P

Loading...

Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

1

260

REEL

2500

N

P-Channel

PowerTrench® T1

DPAK

Low-Medium Voltage

Logic

0

Single

0

-12

-

8

-1.5

-6.7

52

41

28

-

15

1290

-

-

-

-

$0.3823

More Details

Show More

1-25 of 25

Products per page

Jump to :

contact sales icon

Support on the go

Find and compare products, get support and connect with onsemi sales team.