N-Channel PowerTrench® MOSFET, 30V, 160A, 3.9mΩ

Obsolete

Overview

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

  • This product is general usage and suitable for many different applications.

  • rDS(ON) = 3.9mΩ @ VGS = 10V, ID=35A
  • rDS(ON) = 4.4mΩ @ VGS = 4.5V, ID=35A
  • High performance trench technology for extremely lowrDS(ON)
  • Low gate charge
  • High power and current handling capability

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDB8870

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Obsolete

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

1

245

REEL

800

N

N-Channel

PowerTrench® T1

D2PAK

Low-Medium Voltage

Logic

0

Single

0

30

3.9

20

2.5

160

160

-

4.4

12

56

5200

-

-

-

-

Price N/A

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