Low/Medium Voltage MOSFETs | FDB86563_F085

N-Channel PowerTrench® MOSFET, 60V, 110A, 1.8mΩ

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Overview

N-Channel PowerTrench® MOSFET, 60V, 110A, 1.8mΩ

  • Typical RDS(on) = 1.6 mΩ at VGS = 10V, ID = 80 A
  • Typical Qg(tot) = 126 nC at VGS = 10V, ID = 80 A
  • UIS Capability
  • RoHS Compliant
  • Qualified to AEC Q101

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Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDB86563-F085

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Active

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

245

REEL

800

Y

N-Channel

PowerTrench® T6

D2PAK

Low-Medium Voltage

Standard

0

Single

0

60

1.8

20

4

110

333

-

-

-

126

10100

18

150

2355

186

$1.5845

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Reliability Data

Die Related Summary Data

Device: FDB86563-F085

Equivalent to wafer fab process: T9

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

T9

0

1733101746

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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