N-Channel PowerTrench® MOSFET 60V, 158A, 2.5mΩ

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Overview

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low RDS(on), fast switching speed and body diode reverse recovery performance.

  • DC-DC Merchant Power Supply
  • Primary Switch in Isolated DC-DC
  • Synchronous Rectifier
  • Load Switch

  • Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 25 A
  • Max rDS(on) = 3.7 mΩ at VGS = 4.5 V, ID = 20 A
  • advanced Package and Silicon combination for low rDS(on) and high efficiency
  • Next generation enhanced body diode technology, engineered for soft recovery
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMS86500L

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Active

CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

Y

N-Channel

PowerTrench® T6

Power 56 (SO-8FL)

Low-Medium Voltage

Logic

0

Single

0

60

2.5

±20

3

158

104

-

3.7

-

54

9420

11.5

84

1470

50

$1.0157

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