N-Channel PowerTrench® SyncFETTM 30V, 218A, 1.15mΩ

Obsolete

Overview

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge and extremely low rDS(on).

  • This product is general usage and suitable for many different applications.

  • Max rDS(on) = 1.15 mΩ at VGS = 10 V, ID = 40 A
  • Max rDS(on) = 1.3 mΩ at VGS = 4.5 V, ID = 37 A
  • Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency
  • MSL1 Robust Package Design
  • 100% UIL Tested
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMS1D5N03

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Obsolete

CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

Power 56 (SO-8FL)

Low-Medium Voltage

Logic

0

Single

0

30

1.15

16

2

218

83

-

1.3

-

45

6920

-

-

-

-

Price N/A

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