Low/Medium Voltage MOSFETs | FDMC8030

Dual N-Channel Power Trench® MOSFET 40V, 12A, 10mΩ

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Overview

This device includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is enhanced for exceptional thermal performance.

  • Server

  • Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 12 A
  • Max rDS(on) = 14 mΩ at VGS = 4.5 V, ID = 10 A
  • Max rDS(on) = 28 mΩ at VGS = 3.2 V, ID = 4 A
  • Termination is Lead-free and RoHS Compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMC8030

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Last Shipments

CAD Model

Pb

A

H

P

WDFN-8

511DG

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Logic

0

Dual

0

20

Q1=Q2=10

±20

2.8

12

14

-

Q1=Q2=14

-

12

1462

2.5

9

321

20

Price N/A

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Reliability Data

Die Related Summary Data

Device: FDMC8030

Equivalent to wafer fab process: RN

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

RN

9

5181260142

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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