Low/Medium Voltage MOSFETs | FDFM2N111

Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 20 V, 4 A, 100 mΩ

Obsolete

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Overview

FDFM2N111 combines the exceptional performance of PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a MicroFET package.
This device is designed specifically as a single package solution for Standard Buck Converter. It features a fast switching, low gate charge MOSFET with very low onstate resistance.

  • This product is general usage and suitable for many different applications.

  • 4 A, 20 V
  • RDS(ON) = 100 mΩ @ VGS = 4.5 V
  • RDS(ON) = 150 mΩ @ VGS = 2.5 V
  • Low Profile – 0.8 mm maximum – in the new packageMicroFET 3x3 mm

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDFM2N111

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Obsolete

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Reliability Data

Die Related Summary Data

Device: FDFM2N111

Equivalent to wafer fab process: S1,TT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

S1,TT

0

153640249

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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