Low/Medium Voltage MOSFETs | FDD1600N10ALZD

BoostPak (N-Channel PowerTrench® MOSFET + Diode) 100 V, 6.8 A, 160 mΩ

Obsolete

Datasheet

Products

Overview

This N-Channel MOSFET is produced using a PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.The NP diode is hyperfast rectifier with low forward voltage drop and excellent switching performance.

  • LED TV
  • Consumer Appliances

  • RDS(on) = 124 mΩ( Typ.)@ VGS = 10 V, ID = 3.4 A
  • RDS(on) = 175 mΩ ( Typ.)@ VGS = 5.0 V, ID = 2.1 A
  • Low Gate Charge ( Typ.2.78 nC)
  • Low Crss ( Typ. 2.04 pF)
  • Fast Switching
  • 100% Avalanche Tested
  • Improved dv/dt Capability
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDD1600N10ALZD

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Obsolete

CAD Model

Pb

A

H

P

DPAK-5

369AL

1

260

REEL

2500

N

N-Channel

PowerTrench® T1

NA

Low-Medium Voltage

Logic

0

with Si Diodes

0

100

124

±20

2.8

6.8

14.9

-

200

-

2.78

169

0.56

42

43

2.04

Price N/A

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