HUF75345P3: N-Channel UltraFET Power MOSFET 55V, 75A, 7mΩ

Datasheet: MOSFET – Power, N-Channel, UltraFET, 55 V, 75 A, 7 mΩ
Rev. 3 (317kB)
Product Overview
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These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
Features
 
  • 75A, 55V
  • Temperature Compensated PSPICE® and SABER™ Models
  • Thermal Impedance SPICE and SABER Models
  • Peak Current vs Pulse Width Curve
  • UIS Rating Curve
  • Related Literature
     - TB334, “Guidelines for Soldering Surface MountComponents to PC Boards”
Applications
  • AC-DC Merchant Power Supply - Servers & Workstations
  • Workstation
  • Server & Mainframe
Technical Documentation & Design Resources
Application Notes (12) Package Drawings (1)
Data Sheets (1)  
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
HUF75345P3 Active
Pb-free
Halide free
HUF75345P3 TO-220-3 340AT NA Tube 800 $1.2332
Market Leadtime (weeks) : Contact Factory
Avnet   (2020-08-19) : <100

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
HUF75345P3  
 $1.2332 
Pb
H
 Active   
N-Channel
Single
55
±20
4
75
325
-
-
7
-
125
4000
TO-220-3
Case Outlines
340AT   
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